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DATA SHEET
SILICON TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
* Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz * High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN. B
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PT (TC = 25 C) Tj Tstg
RATING 20 12 3 100 580 200 -65 to +150
UNIT V V V mA mW C C
E
PIN CONNECTIONS E: Emitter C: Collector 0.5 0.05 B: Base 2.55 0.2
2.1
1.8 MAX. 0.55
3.8 MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
45
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure Insertion Gain Maximum Available Gain Power Gain SYMBOL ICBO IEBO hFE fT Cre NFNote |S21e|2 MAG GA TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA Pulse VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 7 mA, f = 2 GHz VCE = 10 V, IC = 20 mA, f = 2 GHz VCE = 10 V, IC = 20 mA, f = 2 GHz VCE = 10 V, IC = 7 mA, f = 2 GHz 7.0 10.0 50 120 7 0.5 2.1 9.0 12.0 10 1.0 3.4 MIN. TYP. MAX. 1.0 1.0 300 GHz pF dB dB dB dB UNIT
0.1+0.06 -0.03
0.5 0.05
A A
Document No. P11674EJ1V0DS00 (1st edition) Date Published August 1996 P Printed in Japan
(c)
1996
2SC3603
Note
Test block diagram
Coax. SW Noise Diode Stub Tuner Bias Tee Transistor Under Test Bias Tee
Coax. SW Post Amp Network Analyzer Mixer NF Meter
Coax. SW
* *
To test 1 GHz or lower, insert a bandpass filter.
Sweeper
TYPICAL CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.8 25
|S21e|2 - Insertion Gain - dB MAG - Maximum Available Gain - dB PT - Total Power Dissipation - W
MAG AND INSERTION GAIN vs. FREQUENCY VCE = 10 V IC = 20 mA MAG
0.6
with heat sink Rth(j-e) 90 C/W
20 15 10 5 0 -5 0.1
0.4 Rth(j-a) 590 C/W 0.2
|S21e|2
0
50
100
150
200
0.2
0.5
1
2
5
10
TA - Ambient Temperature - C
f - Frequency - GHz
3
Cre - Reverse Transfer Capacitance - pF
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 200 f = 1.0 MHz
DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V
2
hFE - DC Current Gain
100
1 0.7 0.5 0.3 0.2
50
20
10 0.5 0.1 1 2 3 5 7 10 20 30 VCB - Collector to Base Voltage -V
1
5
10
50
IC - Collector Current - mA
2
2SC3603
INSERTION GAIN vs. COLLECTOR CURRENT 20 VCE = 10 V
NOISE FIGURE vs. COLLECTOR CURRENT 6 VCE =10 V f = 2 GHz 5
|S21e|2 - Insertion Gain - dB
18 16 14 12 10 8 6 4 2 0 1
f = 0.5 GHz
f = 1 GHz
NF - Noise Figure -dB
4
3
f = 2 GHz
2
2
5
10
20
50
1
2
5
10
20
50
IC - Collector Current - mA
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 30 VCE = 10 V 20
fT - Gain Bandwidth Product - GHz
10 7 5 3 2
1
2
3 57 10 IC - Collector Current - mA
20
30
S PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50 f (MHz) |S11| S11 500 1000 1500 2000 2500 3000 3500 4000 .629 .631 .628 .646 .659 .677 .695 .713 -160.8 175.8 162.5 152.2 142.1 132.0 123.8 116.5 |S21| 10.100 5.411 3.565 2.720 2.161 1.916 1.585 1.392 S21 92.6 75.1 60.6 48.4 38.8 25.7 14.3 5.3 |S12| .040 .048 .070 .086 .105 .127 .151 .168 S12 41.5 51.4 59.2 56.0 52.2 45.1 39.7 34.8 |S22| .256 .244 .232 .220 .213 .217 .232 .254 S22 -49.0 -57.2 -66.8 -77.4 -89.1 -103.1 -119.5 -134.0
3
2SC3603
S PARAMETER
S11e, S22e - FREQUENCY
8 0.0 2 0.4
0.9
1.0
0.8
1.2
9 0.0 1 0.4
0.10 0.40
0.11 0.39
0.12 0.35
0.13 0.37
0.14 0.36
80
0.15 0.35
0.1 6 0.3 4
60
1.8
100
90
110
0.7
70
1.4
0.
0.6
0 0.
7 43
12
0
0.1 7 0.3 3
VCE = 10 V IC = 20 mA 500 MHz Step
0. 0. 32
19 0. 31 0.
50
18
44
5 0.
W 0.02 RRD GE N 0.0 ELAT 3 OR 0.4 0.0 7 4 S 0.4 0.0 6 5 15 0.4 0 5
14 0
C
O
M
PO
NE
NT
0.
2.0
0.
0 13
0.2
06
0.2
4 GHz
0.4
0.6
40
0.3
T +J ANC E ZO X
AC
RE
E
TIV
ME
GA
0
0.48 D LOAD OWAR FLECTION COEFFICIENT IN 3 DE G 0.0 GTHS T GLE OF RE REE 0 AN LEN
1.
THS TO
WAVELENG
0.01
0.49
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.2
1.4
1.6
1.8 2.0
3.0
4.0
5.0
10
20 50
0
0
0
0.01
0.2
0.49
0.48 0.02
0.5 GHz
T
4 GHz
0.6
0.5 GHz
0. 8
0
5.0
4.0
-16
0.2
N NE
.47
O
4 VE 0.0 WA 50 -1
0
CO
MP
E
C AN
T AC RE JX -O Z
0.4
0.3
6
5 0.4 5 0.0
4 -1
06
5
4 .4
2.0
0.
0.
1.8
0.6
1.6
0.7
1.4
0.8
0.9
1.0
1.2
S21 - FREQUENCY
90 120 0.5 GHz
VCC = 10 V IC = 20 mA 500 MHz Step
60
S12 - FREQUENCY
90 120
150
30
150 4 GHz
180
4 GHz
5
10
0
180
-150
-30
-150
-120 -90
-60
-120 -90
4
0.
32
0.
18
0 -5
0
3 0.3 7 0.1
-6
4 0.3 6 0.1
0
0.35
-70
0.15
0.36
0.14
-80
0.4
0.37
0.13
0.2
-90
0.12
0.38
0.11 -100
0.39
0.10
-11 0
0.40
0.4 1 0.0 9
-
12 0
0.4 2 0.0 8 0. 43 0. 07 -1 30
M
EG
AT
I
0.
4
VE
0
3. 0
1.0
1.
10
0.1
S22e 0.4
20 50
RESTSTANCE COMPONENT R ZO
0.8
0.
8
0.6
0.6
0.4
0.2
0.
4
0
0
3.
0
1 0.2 9 0.2
0.3
30
0.8
1.0
4.0 5.0
2 0.2 8 0.2
S11e
0.2
10 20
50
20
0.23
0.27
0.1
10
0
0.24
0.25
0.26
0.26
0.25
0.24
-10
0.2
0.27 0.23
0.2 8 0.2 2 -20
-3 0
-4 0
0. 19 0. 31
0.2 1
9
0.3 0 0.2 0
VCE = 10 V IC = 20 mA 500 MHz Step
60
30
0.5 GHz
0.05 0.1 0.15 0.2
0
-30
-60
2SC3603
[MEMO]
5
2SC3603
[MEMO]
6
2SC3603
[MEMO]
7
2SC3603
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96.5
6

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